single crystal silicon

Mechanical Strength Research by Three-Point Bending Method in Nitrogen-Doped Silicon Single Crystal

用三点弯方法研究微氮硅单晶机械强度

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Zr-Ni-N coextruded film is deposited on high speed steel and single crystal silicon slice by using vacuum arc deposition technique. The influences of low energy nitrogen ion beam aid deposition on coating structure, morphology and hardness of Zr-Ni-N film are studied.

采用多弧离子镀技术在高速钢和单晶硅基体上制备Zr-Ni-N复合薄膜，研究了低能氮离子束对Zr-Ni-N涂层结构、表面形貌和硬度的影响。

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Surface Appearance Study of Nd: YAG Solid Laser Milling on Single Crystal Silicon

Nd：YAG固体激光铣削单晶硅表面形貌研究

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Drawing of single crystal silicon in closed thermal system

密闭热系统中拉制硅单晶

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GaN/ Si based devices are of great interest because the silicon substrate has superior properties, such as low-cost, high thermal conductivity, potential applications in the integration of the microelectronics and opto-electronics, mature technology in growth of Si single crystal with large diameter.

由于硅具有价格低、热导率高、大直径单晶生长技术成熟等优势以及在光电集成方面的应用潜力，GaN/Si基器件成为一个研究热点。

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The diamond turning surface of single crystal silicon and germanium appears distribution feature alternate with brightness and darkness.

单晶硅、锗的超精密车削表面存在明暗相间的分布特征。

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In this paper, the present status of the silicon single Crystal floating zone doping process is essentialized.

本文介绍了目前区熔掺杂方法的现状、区熔气相掺杂的优点和基本原理及工艺。

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Study on Electroplated Diamond Wire Saw Slicing Single Crystal Silicon Technology and Mechanism woodworking circular saw machine with hand feeding

电镀金刚石线锯切割单晶硅技术及机理研究手动进料木工圆锯线

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The Surface Effect of FZ Single Crystal Silicon Grown in Hydrogen Atmosphere on ESR

含氢单晶硅的ESR面效应

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The drawing of single crystal silicon in a closed thermal system is described.

本文介绍采用密闭热系统拉晶工艺拉制硅单晶的情况.

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Diamond-like carbon ( DLC ) films were prepared on the single crystal silicon substrate by way of DC-RFPECVD.

采用射频 - 直流等离子体增强 化学气相沉积 技术在单晶硅衬底上沉积了类金刚石薄膜.

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A temperature sensor based single crystal silicon diaphragm was proposed and studied.

理论分析了单晶硅膜温度传感的机理,通过计算得到了硅膜厚度与温度测量范围之间的关系.

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This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.

介绍了直拉法生长单晶硅的基本原理及工艺条件。

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A X-ray detector with PIN structure is fabricated on high-resistivity, n-type < 100> single crystal silicon.

选择高阻N型〈100〉单晶硅材料，X射线探测器为PIN管结构。

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Single crystal silicon slice as target, Ar and O_2 respectively as sputtering and reacting gas, a silicon oxides ( SiO_x) film was deposited on Al substrate by reactive magnetron sputtering.

以单晶硅片为靶材，高纯Ar和O2分别为溅射气体和反应气体，采用反应磁控溅射法在铝基体上制备了硅氧化物薄膜。

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Keywords: micro-gyroscope , silicon single crystal, three-axis angular-rate sensing, natural frequency and mode shapes.

关键词: 微型陀螺仪 、 矽单晶 、 三轴 角速率 感测 、 振动自然频率与模态.

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In the process of cutting hard-brittle material, especially of slicing single crystal silicon, fixed abrasive diamond wire saw is widely used because of its high-performance, less cutting loss, environment friendly and so on.

在硬脆材料（特别是硅晶体）切割工艺中，固结磨料金刚石线锯切片技术因其高效率、低损耗、无污染等优势得以广泛应用。

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Study of Manganese Doped p-type Single Crystal Silicon in the Daubing Source

p型单晶硅涂源掺锰新方法

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Experimental study of ion beam etching semiconductor single crystal silicon

半导体单晶硅的离子束蚀刻实验研究

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We made the Czochralski silicon single crystal with a diameter of 12 inches.

直径12英寸直拉单晶硅研制成功.

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